Ion Implanter Cro Safety Considera

Absolute Dose Performance of the SWIFT Single Wafer Ion implanter

The characteristics of a new high performance implanter ("SWIFT") manufactured by Applied Materials include high accuracy implantation angle control, minimal energy spread [and uniformity and repeatability of dose [<0.5%] at various beam incident angles up to 60 degrees from normal. The latter is achieved using beam current monitoring equipment designed to measure absolute dose. It should be me...

High-current Oxygen Ion Implanter for SIMOX

OVERVIEW: SOI (silicon on insulator) technology* has attracted a lot of attention as a promising breakthrough technology for high-speed, low-power LSIs. Research and development aimed at its practical use are now being conducted over a wide range of fields, including circuit design, device, process, and SOI wafer manufacturing. The key to the practical use of SIMOX (separation by implanted oxyg...

Principles and characteristics of a new generation plasma immersion ion implanter

Aluminum Ion Implantation Using a Variable Energy RFQ Implanter

High energy aluminum ion implantation has been studied for power semiconductor device fabrications. A new MeV ion implanter system using a variable energy RFQ linac is developed and tested for pulse mode operation. The RFQ linac is driven by an r.f. resonance circuit having an external variable inductance coil and it is tuned so that the acceleration energy of aluminum ions is 0.9 MeV. The ions...

Radio Frequency Quadrupole Accelerator: A High Energy and High Current Implanter

In this chapter, issues of applying the radio frequency quadrupole (RFQ) accelerator to ion implantation for material modification and microelectronics will be discussed at first. Subsequently, several examples of the RFQ-based implanters will be introduced, with an emphasis on the ladder IH-RFQ accelerator at Peking University, of which the output beam energy spread is optimized to be much low...